Selective electrochemical process for creating semiconductor nano- and micro- patterns

Highlights

The present invention relates to the field of semiconductor technology. It permits the electrochemical formation of highly defined etch patterns in substrates on redefined surface areas that have been sensitized prior to treatment. The polarization potential, the implantation dose and depth, the exposure time and the implant geometry strongly influence the definition of the structure and determine establishing electro polishing conditions. The process, as compared to earlier art in this field, is very simple, requiring only an implantation and an electrochemical step.

Technology transfer

This technology is available for licensing. There is an opportunity for this invention to be developed for particular applications and for demonstration of the final product through a collaborative research project. The business opportunity may be referred to by its NRC ID: 19023

Market applications

Applications for this technology are of particular interest for electroluminescent devices and sensors. It could be the basis for (or part of) a process leading to extremely high resolution optoelectronic applications.

How it works

A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs. The selective treatment preferably involves implantation with the same ions as the semiconductor. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions. The smallest structure that may be created is limited only by the ion beam dimensions or, in the case of a broad beam implementation, by the mask used to limit the exposure to those areas that are to be made porous.

Benefits

  • Cost-effective processing
  • Highly-reliable method
  • Reduced environmental impact
  • Possibility to produce a light-emitting display in colour
  • Potential shrinkage of device dimensions

Patents

NRC file 19023

Contact

To inquire about this technology, please contact:

Roderick Paterson, Portfolio Business Advisor
Telephone: 613-991-9047
Email: Roderick.Paterson@nrc-cnrc.gc.ca

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