Test and characterization

CPFC offers test and characterization services that complement its core epitaxy and fabrication services. CPFC staff has experience in all aspects of materials characterization, as well as analysis and testing of discrete devices and optical integrated circuits.

An essential element in enhancing device performance and maintaining the quality of production is CPFC's extensive materials characterization and device test facility. CPFC has a wide-range of in-house instrumentation and test equipment.

Analytical techniques and materials characterization

  • interferometry white light and UV-visible);
  • ellipsometry;
  • stress analysis;
  • field emission scanning electron microscopy (FE-SEM);
  • C-V profiling;
  • atomic force microscopy (AFM) and scanning capacitance microscopy (SCM);
  • scanning auger microscopy (SAM);
  • X-ray photoelectron spectroscopy (XPS);
  • dynamic secondary ion mass spectrometry (SIMS);
  • transmission electron microscopy (TEM);
  • high resolution X-raydDiffraction (HRXRD);
  • Hall effect for carrier concentration and mobility;
  • Nomarski surface inspection;
  • SurfscanTM for defect counting and mapping;
  • spectral reflectance mapping;
  • photoluminescence mapping.

Optical and electrical testing

  • measurement of critical optical material parameters including refractive index, absorption and birefringence using ellipsometry, waveguide mode spectroscopy, and power spectral density methods;
  • full waveguide device characterization capability including waveguide loss, birefringence and absorption spectroscopy from the visible to near infra-red;
  • birefringence and absorption spectroscopy from the visible to near infra-red;
  • passive device spectral response, insertion loss, polarization mode dispersion and polarization dependent loss;
  • standard laser measurements including L-I-V, quantum efficiency, temperature dependence and spectral characterization;
  • active optoelectronic device test including pulsed response, and standard electrical characterization including dc and low frequency impedance and transconductance measurements from T=80 K to 500 K;
  • optical film characterization in the visible and IR;
  • power spectral density measurements for TM/TE polarization;
  • I-V characterization;
  • frequency and RIN response;
  • quantum efficiency;
  • spectral response;
  • thermal properties;
  • gain analysis;
  • transparency and cavity loss measurement;
  • semiconductor parameter analysis;
  • DC & RF performance.