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Enquiries: NRC-CPFC


Phone: 613-990-9742
Fax: 613-957-8734
Email: cpfc.info@nrc-cnrc.gc.ca

1200 Montreal Road, M-50
Ottawa, Ontario, K1A 0R6
Canada

NRC Experts and Staff

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Epitaxy

CPFC operates a Metal Organic Chemical Vapor Deposition (MOCVD) reactor with ample capacity for development and production of GaAs and InP based wafers. CPFC is capable of growing single and multiple 2", 3", 4" and 6" diameter GaAs and InP based wafers to meet a variety of device needs. Our team of experienced manufacturing professionals have expertise in growing a wide range of custom designed epitaxial structures.

Recognizing that time-to-market is critical to customers' success, CPFC strives to provide the fastest turnaround times possible for epitaxial products. CPFC is also able to assure excellent quality and performance using epitaxy specific metrology in support of the production of epitaxial wafers.

GaAs and InP Based Wafers

CPFC offers epitaxial growth in the following material systems:

  • InP
  • InGaAsP (lattice matched to InP or GaAs)
  • GaAs
  • AlGaAs/GaAs - InAlAs/InP
  • InGaAlAs/InP

Custom Designed Epitaxial Structures

Epitaxy

A wide range of active and passive device structures have been grown using the epitaxial and processing facilities within the CPFC. Several of these device structures rely on the ability to re-grow epitaxial layers after some device fabrication steps have taken place.

These include:

  • Fabry Perot lasers
  • Distributed feedback (DFB) lasers
  • Buried heterostructure (BH) DFB lasers
  • Light emitting diodes (LED's)
  • Quantum cascade lasers (QCL's)
  • Optical waveguides - both III-V and Si based
  • Bragg mirror reflector stacks
  • Saturable absorber mirrors

Epitaxy Specific Metrology

The following list summarizes the specific metrology that the CPFC offers in support of its suite of epitaxial services:

  • In-situ reflectance growth rate monitoring and optical pyrometry
  • Double crystal x-ray diffraction (single point and mapping)
  • Photoluminescence (PL) and reflectance (R) mapping
  • Surfscan™ (for defect counting and mapping)
  • Electrochemical (Polaron) profiling
  • Hall effect
  • Nomarski surface inspection
  • SEM, AUGER, SIMS, TEM, AFM, STEM

Related Information

Institutes: