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V90 Multi Group V Molecular Beam Epitaxy system (IMS)
Molecular Beam Epitaxy (MBE) is an advanced crystal growth technology based on the precise delivery of atoms in an ultra high vacuum (UHV) environment. With an arsenal of in-situ monitoring techniques, the growth can be controlled with a precision better than one atomic layer. This is necessary for the development of cutting edge semiconductor heterostructures exploiting quantum phenomena, such as semiconductor lasers, quantum dot systems, resonant tunneling diodes, and single electron transistors. This custom V90+ MBE system is devoted to the growth of a wide range of III-V semiconductor compounds including arsenides, antimonides and dilute nitrides. Full wafer transfer automation, together with sophisticated computer control system, enable 24/7 operation for batch-mode semiconductor epiwafer growth. The system is equipped to grow on GaAs and GaSb wafers from 50 to 100 mm in diameter and can grow a wide range of the high quality multilayer structures using Ga, In and Al as group III materials, and As, Sb and N as the group V material, as well Si and Te for n-type doping and Be for p-type doping. The system is equipped with an advanced RHEED system for surface reconstruction monitoring, an optical band-edge absorption thermometry system, an emissivity-compensated pyrometer, and a dual wavelength reflectance system for real-time growth rate monitoring. It also has several Quadruple Mass Spectrometers, including one designed for Desorption Mass Spectrometry to enable real-time monitoring of surface chemistry during growth.
