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Secondary ion mass Spectrometry (SIMS)
Secondary Ion Mass Spectometry (SIMS) is used to probe impurity and dopant distribution in solid materials. High energy ions are used to sputter a solid target and ejected ions from the solid matrix are analyzed by masse spectrometry techniques (electrostatic or magnetic mass filtering). The institute operates a Physical Electronics Adept 1010 electrostatic quadrupole based SIMS apparatus. This system can operate with a Cs ion or O ion source (250 eV – 10 keV) and has ultra-shallow (< 10 nm) depth profiling capability over a range of 1-300 amu.
This instrument is primarily used to probe the depth composition profiles in semiconductor layered structures and measure dopant distributions in semiconductor thin films and epitaxial layers. Dopant concentration in the range 1015-1020 atoms/cm3 are routinely measured with this instrument. The depth resolution in sputter depth analysis is typically of 4 nm.
SIMS is used to optimize semiconductor processes (quality control), measurements of dopants and detection of contaminants in bulk material and thin films.
