Semiconductor Device Design & Test

Quantum and Photonic Devices

• Passive waveguide device testing - including spectral response, insertion loss, polarization mode dispersion, absorption spectroscopy, polarization dependent loss.
• Semiconductor laser testing - T = 5°C to 80°C, threshold current, transparency current, relative intensity noise, internal loss, quantum efficiency, series and thermal resistances.
• Tunable light sources from 1460 nm to 1630 nm, and at 1280 nm to 1330 nm, as well as discrete laser sources in the visible and near infrared.
• UV to near-IR emission spectroscopy. Three detectors are available spanning a wavelength range from 300 to 1700 nm: an uncooled photon-counting S20 photomultiplier, thermoelectrically cooled Si avalanche photodiode, and a liquid-nitrogen-cooled high-purity-Ge p-i-n diode.
• Manual and semi-automatic probe stations for device testing from 80 K to 500 K using DC and low frequency impedance and transconductance measurements.
• High-frequency small signal and noise measurements on electronic devices to 40 GHz.
• Full suite of commercial and in-house software tools for electronic device design, simulation and analysis, including carrier dynamics and thermal distributions.
• Full suite of commercial and in-house software tools for photonic device design, simulation and analysis, including FEM, FDTD, and BPM based numerical methods.
• Finite element method (FEM) modeling ofstress distributions and stress-optic interactions in optoelectronic devices.
• Tunable Cr4+:YAG laser capable of providing 200 mW, CW power tunable over approximately 200 nm centred at 1450 nm.
• Ultrashort pulse Cr4+:YAG laser capable of providing 40 fs pulses of 1550 nm radiation at an average power of 250 mW.
• High repetition rate (1 kHz) diode-pumped Nd:YVO4 grazing incidence slab laser generating 3 ns pulses of 1064 nm radiation with millijoule pulse energy.
• Probe station, picoammeter, and impedance meter facility for measuring the capacitancevoltage and current-voltage characteristics of metal-insulator-semiconductor.
• Transport measurement capabilities for devices down to 100fA and from DC up to 50 GHz. Measurement environments from room temperature down to 6mK and magnetic fields up to 18T.

Building Name:

Building No.:

Related Information

Institutes:

• NRC Institute for Microstructural Sciences