Common menu bar links
Related Information
Institutes & Programs
- NRC Canadian Photonics Fabrication Centre
- NRC Centre for Surface Transportation Technology
- NRC Genomics and Health Initiative
- NRC Imaging Network Portal
- NRC Institute for Aerospace Research
- NRC Institute for Biodiagnostics
- NRC Institute for Information Technology
- NRC Institute for Microstructural Sciences
- NRC Institute for Research in Construction
- National Institute for Nanotechnology
- National Research Council Canada
Key Sectors
Areas of Research
Communities
Careers
Events
Contact
Philip Poole
Phone: 613-993-7172
Fax: 613-990-0202
Email: Philip.Poole@nrc-cnrc.gc.ca
Riber 32P III-V Chemical Beam Epitaxy system (IMS)
Chemical Beam Epitaxy (CBE) is an advanced crystal growth technology based on the precise delivery of atoms in an ultra high vacuum (UHV) environment. With an arsenal of in-situ monitoring techniques, the growth can be controlled with a precision better than one atomic layer. This is necessary for the development of cutting edge semiconductor heterostructures exploiting quantum phenomena, such as semiconductor lasers, quantum dot systems, resonant tunneling diodes, and single electron transistors. The Riber 32P is devoted to the growth of a wide range of III-V semiconductor compounds based on arsenides and phosphides. The system is equipped to grow on wafers up to 75 mm in diameter and can grow a wide range of high quality multilayer structures using Ga and In group III materials, and As and P as the group V materials. Si is used for n-type doping and Be or Zn for p-type doping. The use of organometallic group III sources allows selective area epitaxy to be performed. It is equipped with an optical band-edge absorption thermometry system, an emissivity compensated pyrometer, and a dual wavelength reflectance system for real-time growth rate monitoring.
