Prototyping
Canadian photonics fabrication centre (CPFC)
- 11,000sq/ft of clean room (calss 1000/100)
- up to 150 mm wafers
- MOCVD - Thomas Swann – multi-wafer, 50 to 150mm wafers
- Characterization
- PL and reflectance mapping - Accent
- Electrochemical (Polaron) profiling - Accent
- Hall effect for carrier concentration and mobility
- DCD-XRD - Philips
- 11,000sq/ft of clean room (class 1000/100)
- up to 150mm wafers Direct write 50 KV e-beam – JEOL 6000FSEFab
- 15nm resolution, 20 nm minimum feature, 40nm placement and overlay accuracy, 40nm field stitching, patterning of 50 to 200mm wafers and chips, fabrication of 100 to 150mm specialty masks
- Stepper – ASML 5500/100 – 0.4 um resolution (with 70 nm overlay)
- Nano-Imprint - IMPRIO 100 from Molecular Imprints Inc - sub-50nm resolution, up to 200 mm wafers, prints 25x25mm areas, step alignment of better than 250nm
- Contact Aligners – Karl Suss MA6 & MBJ3
- Holographic gratings – automated custom design
- CVD depositions
- PECVD – STS(2) & Trikon Delta for oxinitride (refractive index tuning and stress tuning), Oxide, Nitride, Doped Oxides (P, B, Ge etc.)
- LPCVD – Tystar for poly-silicon
- Thermal – Tystar for oxides up to 15 micron
Dry Etching
- Deep RIE of silicon – STS ASE with ICP plasma source & cryogenic cooling
- Deep RIE of oxides – STS AOE
- RIE of dielectrics – PlasmaTherm & Tegal 901(3)
- ICP etching of III-V materials – Trikon Omega
Wet Etching
- Segregated multiple manual wet benches (Si and III-V) processing
- Automated single side etch – Matech Waveetch
- Selective and non selective wet etch chemistries
Additional clean-room process capabilities:
- Spin-on materials (BCB, SOG, polymers)
- Downstream plasma strippers - Matrix
- Annealing and reflow of PECVD films
Inspection & Controls
- Optical Microscopy
- Scanning Electron Microscopy (SEM) – Hitachi 4700FE
- Surface pro-filing (contact/non-contact) – Tencor P10
- Ellipsometry
- Stress measurement - FSM
- Nomarski surface inspection
- Surfscan (tm) for defect counting and mapping
Back End Processing
- Gold electroplating
- Front side identification
- Wafer thinning and polishing to <100um
- Sputter deposition and anneal of backside metals
- Full wafer dismount and cleaning
- Scribe and cleave, sawing and dicing
- Dielectric facet coating
- Die bond and wire-bond
- AR coating
- BS Metalization (Gold)
Building Name:
A.G.L. McNaughton Building
Building No.:
M-50
Related Information
Institutes: