Common menu bar links
Related Information
Institutes & Programs
- NRC Canadian Photonics Fabrication Centre
- NRC Centre for Surface Transportation Technology
- NRC Genomics and Health Initiative
- NRC Imaging Network Portal
- NRC Institute for Aerospace Research
- NRC Institute for Biodiagnostics
- NRC Institute for Information Technology
- NRC Institute for Microstructural Sciences
- NRC Institute for Research in Construction
- National Institute for Nanotechnology
- National Research Council Canada
Key Sectors
Areas of Research
Communities
Careers
Events
Contact
Jean Lapointe
Phone: 613-991-2613
Fax: 613-990-0202
Email: Jean.Lapointe@nrc-cnrc.gc.ca
Contact aligners (Optical Lithography)
The fabrication of semi-conductor devices requires the alignment of successive mask layers, to pattern the successive steps that generate the entire device. In the Nanofabrication facility, while some devices are patterned by e-beam lithography, most samples are patterned using contact lithography, where the sample is brought into contact with the mask.
The Nanofabrication Group has four Karl Suss MJB3 high precision contact mask aligners. MJB3 UV400 aligners (using exposure wavelengths between 350 and 450nm) are capable of patterning 0.6 micron features. These aligners can pattern a wafer up to 75 mm (3") diameter, but are also able of patterning the smaller pieces of wafers commonly required in the Nanofabrication labs.
Alignment accuracy depends on the alignment marks used and the sample size; but alignment accuracies of 0.5 micron can be achieved on the commonly used samples of less than 1 cm2.
In addition, one of the MJB3 mask aligners has a second set of optics for 280 to 350nm wavelength exposures, as well as the 400nm optics. With these UV300 optics installed, it is capable of patterning 0.4 micron features.
Another MJB3 UV400 has backside alignment capability (using IR alignment through the sample). Alignment accuracy depends on the IR transmission of the substrate, the substrate roughness, the substrate thickness, and the contrast for the alignment features. In many applications, alignments of better than 5 microns can be achieved.
