Common menu bar links
Related Information
Institutes & Programs
- NRC Biotechnology Research Institute
- NRC Canada Institute for Scientific and Technical Information
- NRC Canadian Hydraulics Centre
- NRC Canadian Neutron Beam Centre
- NRC Canadian Photonics Fabrication Centre
- NRC Centre for Surface Transportation Technology
- NRC Genomics and Health Initiative
- NRC Herzberg Institute of Astrophysics
- NRC Imaging Network Portal
- NRC Industrial Materials Institute
- NRC Industrial Research Assistance Program
- NRC Institute for Aerospace Research
- NRC Institute for Biodiagnostics
- NRC Institute for Biological Sciences
- NRC Institute for Chemical Process and Environmental Technology
- NRC Institute for Fuel Cell Innovation
- NRC Institute for Information Technology
- NRC Institute for Marine Biosciences
- NRC Institute for Microstructural Sciences
- NRC Institute for National Measurement Standards
- NRC Institute for Nutrisciences and Health
- NRC Institute for Ocean Technology
- NRC Institute for Research in Construction
- NRC Plant Biotechnology Institute
- NRC Steacie Institute for Molecular Sciences
- National Bioproducts Program
- National Institute for Nanotechnology
- National Research Council Canada
Areas of Research
Communities
Careers
Events
Contact
Philip Poole
Phone: 613-993-7172
Fax: 613-990-0202
Email: Philip.Poole@nrc-cnrc.gc.ca
Nanotemplate Chemical Beam Epitaxy system (IMS)
Chemical Beam Epitaxy (CBE) is an advanced crystal growth technology based on the precise delivery of atoms in an ultra high vacuum (UHV) environment. With an arsenal of in-situ monitoring techniques, the growth can be controlled with a precision better than one atomic layer. This is necessary for the development of cutting edge semiconductor heterostructures exploiting quantum phenomena, such as semiconductor lasers, quantum dot systems, resonant tunneling diodes, and single electron transistors. The Nanotemplate growth system is devoted to the growth of a wide range of III-V semiconductor compounds based on arsenides and phosphides, with particular emphasis on the growth of nanostructures on patterned substrates. The system can grow a wide range of high quality multilayer structures using Ga and In group III materials, and As and P as the group V materials. Si is used for n-type doping and Zn for p-type doping. The use of organometallic group III sources allows selective area epitaxy to be performed for the growth of precisely positioned quantum nanostructures. It is equipped with an optical band-edge absorption thermometry system, and SEM column in the growth chamber.
