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SVTA S35N Nitride Molecular Beam Epitaxy system (IMS)
Nitride Molecular Beam Epitaxy (MBE) is an advanced growth technology for the development of a new class of wide bandgap III-nitride materials and devices. Using either a plasma nitrogen source, or an ammonia injector source, epitaxial growth of high quality GaN based electronic devices as well as high precision quantum structures can be performed in an ultra high vacuum environment, utilising an arsenal of in-situ monitoring technologies. Nitride MBE techniques have demonstrated great successes and advance in areas such as high frequency, high power transistors, blue laser diodes, GaN and InN quantum dots and nanowires. The SVTA S35N system is optimized for ammonia MBE growth, and is devoted to the growth of AlGaN/GaN based heterostructure field-effect transistors (HFET) and diodes on SiC, sapphire and silicon substrates for applications in advanced high power and microwave electronics. The system is equipped with an IMS proprietary carbon doping source, which is critical for the growth of semi-insulating GaN material required for GaN/AlGaN HFET devices. There are also in-situ RHEED and optical reflectance systems for real-time growth rate monitoring. Si is used for n-type doping, and Mg for p-type. This system is optimized for growth on 50 mm wafers, but can also grow on 75 mm wafers.
