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JEOL-JEM-2100F Field Emission Transmission Electron Microscope

JEOL-JEM-2100F Field Emission Transmission Electron Microscope

The institute operates a state-of-art JEOL JEM-2100F field emission transmission electron microscope (TEM) equipped with an Oxford INCA Energy TEM 200 (EDS – Energy Dispersive X-ray Spectrometer) system, a Gatan GIF Tridiem (EELS - Electron Energy Loss Spectrometer) system and a Fischione high-angle annular dark field detector. The features of JEM-2100F include a high-brightness Schottky field emission electron gun producing a probe size of less than 0.2nm. Ultra-high point-to-point TEM resolution is 0.19nm, and atomic scale resolution of 0.136nm can be achieved using high angle annular dark field (HAADF) STEM (STEM – Scanning Transmission Electron Microscopy) imaging. 

The facilities are ideally suited for crystallographic and chemical analyses at a sub-nanometer scale, including high-sensitivity EDS and EELS. Both EDS and EELS are analytical TEM (ATEM) techniques and can provide elemental composition and distribution information.

The work is mainly focused on TEM, STEM, EDS and EELS studies of semiconductor materials and devices. The standard plan-view and cross-section TEM sample preparation techniques such as dimpling and ion milling technique, wedge technique (tripod polishing) and FIB technique are available to prepare the TEM samples. We encourage clients to bring their own TEM-ready samples to our lab for the study. Our TEM facilities are for Semiconductor/Materials applications, not for biological applications and we normally don’t work on the organic materials.

Building Name:

A.G.L. McNaughton Building

Building No.:

M-50

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